JPS6241429B2 - - Google Patents
Info
- Publication number
- JPS6241429B2 JPS6241429B2 JP55061419A JP6141980A JPS6241429B2 JP S6241429 B2 JPS6241429 B2 JP S6241429B2 JP 55061419 A JP55061419 A JP 55061419A JP 6141980 A JP6141980 A JP 6141980A JP S6241429 B2 JPS6241429 B2 JP S6241429B2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- film
- point metal
- high melting
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 description 54
- 229910052750 molybdenum Inorganic materials 0.000 description 31
- 239000011733 molybdenum Substances 0.000 description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 30
- 150000002500 ions Chemical class 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- -1 arsenic ions Chemical class 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141980A JPS56157066A (en) | 1980-05-09 | 1980-05-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141980A JPS56157066A (en) | 1980-05-09 | 1980-05-09 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157066A JPS56157066A (en) | 1981-12-04 |
| JPS6241429B2 true JPS6241429B2 (en]) | 1987-09-02 |
Family
ID=13170554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6141980A Granted JPS56157066A (en) | 1980-05-09 | 1980-05-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157066A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323697A (ja) * | 1989-06-21 | 1991-01-31 | Matsushita Electric Ind Co Ltd | 電気部品のリード線切断成形方法および装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3523093B2 (ja) | 1997-11-28 | 2004-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
1980
- 1980-05-09 JP JP6141980A patent/JPS56157066A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323697A (ja) * | 1989-06-21 | 1991-01-31 | Matsushita Electric Ind Co Ltd | 電気部品のリード線切断成形方法および装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157066A (en) | 1981-12-04 |
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